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Silicene on Insulators
Growth and Functionalization of Silicene on insulating thin films.
by - 19 February 2014
Niveau: PhD Thesis
Silicene is a new structure with a hexagonal lattice which forms when a single layer of silicon atoms is deposited on a noble metal substrate (silver or gold). This is the silicon counterpart of graphene. Depending on the atomic structure of the metal, nanoribbons or sheets can be grown. Our discovery of this new material several years ago has led to silicene being considered as a promising novel material for nano-electronics. Silicene should naturally benefit from current Si-based research and development technology. For instance, the fabrication of the electrical contacts would be simpler because silicides (e.g. NiSi2) could be more easily grown on silicene.
The aim of this thesis is the growth, the characterization and the functionalization of silicene on insulating thin films. To achieve this, we propose to study the growth of silicene on insulating thin films (AlN, NiO, NaCl). The functionalization of silicene will be obtained initially by doping with hydrogen or oxygen (atomic or molecular) in order to tune the band gap. A combined experimental investigation of the self-assembly of silicene on insulating thin films will be performed at ISMO using surface science techniques (STM, STS, nc-AFM, AES, LEED). This thesis is expected to provide the basic knowledge of the parameters for silicene growth on different insulating materials. The aim is to obtain a detailed understanding of the microscopic factors that control the self-assembly and the transport characteristics of this novel nano-scale material.
During this thesis there will be close collaborations with several institutions abroad; the University of Central Florida, University of Zurich, and Prague Institute of Physics in the Czech Republic, as well as the national Synchrotron facility SOLEIL here at Saclay.
View online : Silicene : wires and sheets
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