Institut des Sciences Moléculaires d'Orsay



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Accueil > Séminaires > Année 2011 > Séminaire Frederico D. Novaes (21 juin 2011)

Séminaire Frederico D. Novaes (21 juin 2011)

Institut de Ciència de Materials de Barcelona (CSIC)

Negative differential resistance in molecular devices explored with Transiesta

Recent studies on molecular devices [1] [2], using the Scanning Tunneling
Microscope (STM) show a negative differential resistance (NDR). Ab-initio
based transport calculations can be used to have an atomic level description of
molecular junctions, helping to quantify the processes at work and to unravel the
mechanisms of NDR in such systems.

We have used the Transiesta code [3] to simulate the I-V characteristics of
fullerene molecules decoupled from a gold substrate by tetraphenyl adamantane
molecules. We will compare our resuls to the ones experimentally obtained.

[1Phys. Rev. Lett. 100, 036807 (2008)

[2Appl. Phys. Lett. 86, 204102 (2005)

[3Phys. Rev. B 65, 165401 (2002)

Affiche F.Novaes - 147.2 ko