Luminescence of two-dimensional semiconductors induced by electron tunneling effect : transport and electron-exciton interaction effects
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Scanning tunneling microscopy-induced luminescence has established itself over the past decade as a unique nano-optics tool, notably for studying the elementary processes of electroluminescence in semiconductor nanomaterials. This technique uses the tunnel current beneath the scanning tunneling microscope (STM) tip as a local (nanometer-scale) excitation source for the luminescence of the systems under study, which is detected in the far field. The aim of this thesis work was to experimentally investigate crucial yet still poorly understood aspects of the excitation and emission processes involved in this technique when applied to monolayer transition metal dichalcogenides