Mardi 18 juin, 9h
Amphithéâtre de l’ISMO

Growth of phosphorene by epitaxy on Au(110), Ni(111), Ni(110)
 
In recent years, two-dimensional (2D) materials have attracted increasing interest due to their exceptional physical and chemical properties. Among them, phosphorene, a single-element 2D semiconductor, stands out for its direct and tunable bandgap, making it a promising candidate for various applications such as optoelectronics. Unlike bulk black phosphorus, phosphorene exhibits unique electronic and optical properties that vary depending on the substrate on which it is deposited. The interaction with the substrate plays a crucial role in stabilizing and modulating phosphorene’s characteristics, motivating the exploration of new substrates and their effects on this material. We used the MBE technique to grow phosphorene on three metallic substrates: Au(110), Ni(111), and Ni(110). The morphology of the films was analyzed using low-temperature scanning tunneling microscopy (LT-STM), revealing different structures of phosphorene depending on the substrate. Low-energy electron diffraction (LEED) was employed to characterize the crystalline structure and identify the possible formation of superstructures induced by interaction with the metallic support.